Model: | NXH003P120M3F2PTNG |
---|---|
Product Category: | FET, MOSFET Arrays |
Manufacturer: | Sanyo Semiconductor/onsemi |
Description: | SILICON CARBIDE |
Encapsulation: | - |
Package: | Tray |
RoHS Status: | 1 |
Quantity
Price
Total Price
1
$258.7200
$258.7200
20
$242.3200
$4,846.4000
40
$233.2100
$9,328.4000
TYPE | DESCRIPTION |
Mfr | Sanyo Semiconductor/onsemi |
Series | - |
Package | Tray |
Product Status | ACTIVE |
Package / Case | Module |
Mounting Type | Chassis Mount |
Configuration | 2 N-Channel (Half Bridge) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Technology | Silicon Carbide (SiC) |
Power - Max | 1.48kW (Tj) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 435A (Tj) |
Input Capacitance (Ciss) (Max) @ Vds | 20889pF @ 800V |
Rds On (Max) @ Id, Vgs | 5mOhm @ 200A, 18V |
Gate Charge (Qg) (Max) @ Vgs | 1200nC @ 20V |
Vgs(th) (Max) @ Id | 4.4V @ 160mA |
Supplier Device Package | 36-PIM (56.7x62.8) |