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Taoxin Chuangke HK

Product Details
  • image of Single FETs, MOSFETs>TPH3206LDG-TR
  • image of Single FETs, MOSFETs>TPH3206LDG-TR
Model TPH3206LDG-TR
Product Category Single FETs, MOSFETs
Manufacturer Transphorm
Description GANFET N-CH 600
Encapsulation -
Package Tray
RoHS Status
image of Single FETs, MOSFETs>11594708
11594708
Model
11594708
Product Category
Single FETs, MOSFETs
Manufacturer
Transphorm
Description
GANFET N-CH 600
Encapsulation
-
Package
Tray
lang_roHSStatusStatus
Product parameters
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TYPEDESCRIPTION
MfrTransphorm
Series-
PackageTray
Product StatusOBSOLETE
Package / Case3-PowerDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Rds On (Max) @ Id, Vgs180mOhm @ 11A, 8V
Power Dissipation (Max)96W (Tc)
Vgs(th) (Max) @ Id2.6V @ 500µA
Supplier Device Package3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)8V
Vgs (Max)±18V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds760 pF @ 480 V
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