Language:en 
- zh-cn
- en
- ru
Taoxin Chuangke HK
| Model： | TP65H150G4LSG |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | Transphorm |
| Description： | GAN FET N-CH 65 |
| Encapsulation： | - |
| Package： | Tray |
| RoHS Status： | |
Quantity
Price
Total Price
1
$5.0600
$5.0600
10
$4.5400
$45.4000
100
$3.7200
$372.0000
500
$3.1700
$1,585.0000
1000
$2.6700
$2,670.0000
3000
$2.3500
$7,050.0000
| TYPE | DESCRIPTION |
| Mfr | Transphorm |
| Series | - |
| Package | Tray |
| Product Status | ACTIVE |
| Package / Case | 3-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 8.5A, 10V |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 4.8V @ 500µA |
| Supplier Device Package | 3-PQFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 598 pF @ 400 V |
