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  • image of Memory>EM6HE16EWAKG-10H
  • image of Memory>EM6HE16EWAKG-10H
EM6HE16EWAKG-10H
Memory
Etron Technology, Inc.
IC DRAM 4GBIT P
-
卷带(TR) - -
-
: 10.08

1

10.08

10.08

10

9.28

92.8

25

9.0864

227.16

50

9.055

452.75

100

8.1249

812.49

250

7.87928

1969.82

500

7.49264

3746.32

image of Memory>EM6HE16EWAKG-10H
image of Memory>EM6HE16EWAKG-10H
EM6HE16EWAKG-10H
EM6HE16EWAKG-10H
Memory
Etron Technology, Inc.
IC DRAM 4GBIT P
-
卷带(TR) - -
-
TYPEDESCRIPTION
MfrEtron Technology, Inc.
Series-
PackageTape & Reel (TR)
Part StatusActive
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - DDR3L
Memory Size4Gb (256M x 16)
Memory InterfaceParallel
Clock Frequency933 MHz
Write Cycle Time - Word, Page15ns
Access Time20 ns
Voltage - Supply1.283V ~ 1.45V
Operating Temperature0°C ~ 95°C (TC)
Mounting TypeSurface Mount
Package / Case96-TFBGA
Supplier Device Package96-FBGA (7.5x13.5)
Base Product NumberEM6HE16
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