:英文 
- 中文
- 英文
- Русский
Taoxin Chuangke HK
.png "Hot Product")
| ： | K4S561632J-UI75 |
|---|---|
| ： | Hot Product |
| ： | - |
| ： | - |
| ： | ssop |
| ： | 2000 |
| ： | YES |
| TYPE | DESCRIPTION |
| Surface Mount | YES |
| Number of Terminals | 54 |
| Manufacturer | Samsung Semiconductor |
| Package Shape | RECTANGULAR |
| Number of Words | 16777216 words |
| JESD-609 Code | e6 |
| Pbfree Code | Yes |
| Terminal Finish | Tin/Bismuth (Sn97Bi3) |
| Additional Feature | AUTO/SELF REFRESH |
| Subcategory | DRAMs |
| Technology | CMOS |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Number of Functions | 1 |
| Terminal Pitch | 0.8 mm |
| Reach Compliance Code | unknown |
| JESD-30 Code | R-PDSO-G54 |
| Qualification Status | Not Qualified |
| Supply Voltage-Max (Vsup) | 3.6 V |
| Power Supplies | 3.3 V |
| Temperature Grade | INDUSTRIAL |
| Supply Voltage-Min (Vsup) | 3 V |
| Number of Ports | 1 |
| Operating Mode | SYNCHRONOUS |
| Supply Current-Max | 0.18 mA |
| Organization | 16MX16 |
| Output Characteristics | 3-STATE |
| Seated Height-Max | 1.2 mm |
| Memory Width | 16 |
| Standby Current-Max | 0.002 A |
| Memory Density | 268435456 bit |
| I/O Type | COMMON |
| Memory IC Type | SYNCHRONOUS DRAM |
| Refresh Cycles | 8192 |
| Sequential Burst Length | 1,2,4,8,FP |
| Interleaved Burst Length | 1,2,4,8 |
| Access Mode | FOUR BANK PAGE BURST |
| Self Refresh | YES |
| Length | 22.22 mm |
| Width | 10.16 mm |
